2008. 1. 22 1/2 semiconductor technical data KDP610UL silicon epitaxial pin type diode revision no : 0 for antenna switches in mobile applications. features array type (4 diode in one package) low capacitance low series resistance maximum rating (ta=25 ) ulp-8 millimeters c g a d e f a b dim top view side view bottom view g b e c 85 14 d f 1.80 0.05 + _ 1.20 0.05 + _ 0.20 0.05 + _ 0.40 0.05 + _ 0.25 0.05 + _ 0.45 0.05 + _ max 0.5 electrical characteristics (ta=25 ) characteristic symbol rating unit reverse voltage v r 30 v forward current i f 100 ma junction temperature t j 150 storage temperature range t stg -55 150 characteristic symbol test condition min. typ. max. unit reverse current i r v r =30v - - 0.1 a forward voltage v f i f =10ma - - 1.0 v total capacitance c t v r =1v, f=1mhz - - 0.30 pf series resistance r s i f =10ma, f=100mhz - - 1.3 esd-capability * - c=200pf, r=0 , both forward and reverse direction 1 pulse 100 - - * failure cirterion : i r >100na at v r =30v. tentative
2008. 1. 22 2/2 KDP610UL revision no : 0
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